A REVIEW OF N TYPE GE

≤ 0.15) is epitaxially developed over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which you can the composition is cycled by means of oxidizing and annealing levels. Mainly because of the preferential oxidation of Si about Ge [sixty eight], the initial Si1–summary = "We analyze the optical gain of tensile-strained,